Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
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This market-leading textbook remains the standard of excellence and innovation. Built on Adel S. Sedra's and Kenneth C. Smith's solid pedagogical foundation, the seventh edition of Microelectronic Circuits is the best yet. In addition to updated content and coverage designed to reflect changes in IC technology, the text also provides the most comprehensive, flexible, accurate, and design-oriented treatment of electronic circuits available today.
Amply illustrated by a wealth of examples and complemented by an expanded number of well-designed end-of-chapter problems and practice exercises, Microelectronic Circuits is the most current resource available for teaching tomorrow's engineers how to analyze and design electronic circuits.
the center frequency) and falls off on both sides of this frequency, as shown in Fig. 1.26(c). Amplifiers with such a response are called tuned amplifiers, bandpass amplifiers, or bandpass filters. A tuned amplifier forms the heart of the front-end or tuner of a communication receiver; by adjusting its center frequency to coincide with the frequency of a desired communications channel (e.g., a radio station), the signal of this particular channel can be received while those of other channels are
(see Section 1.6 and, for more detail, Appendix E), the gain A(s) of an internally compensated op amp may be expressed as A0 A ( s ) = --------------------1 + s ⁄ ωb (2.42) which for physical frequencies, s = jω, becomes A0 A ( j ω ) = -----------------------1 + j ω ⁄ ωb (2.43) where A0 denotes the dc gain and ωb is the 3-dB frequency (corner frequency or “break” frequency). For the example shown in Fig. 2.39, A0 = 105 and ωb = 2π × 10 rad/s. For frequencies ω ӷ ωb (about 10 times and
provides for each input sample the corresponding N-bit digital representation (according to Eq. 1.3) at its N output terminals. Thus although the voltage at the input might be, say, 6.51 V, at each of the output terminals (say, at the ith terminal), the voltage will be either low (0 V) or high (5 V) if bi is supposed Analog ϩ v input A Ϫ A/D converter b0 b1 bNϪ1 Digital output Figure 1.10 Block-diagram representation of the analog-to-digital converter (ADC). 14 Chapter 1 Signals and
10-nF capacitor. What are the gains and phase shifts found for this circuit at one-tenth and 10 times the unity-gain frequency? A series input resistor is added to limit the gain magnitude at high frequencies to 100 V/V. What is the associated 3-dB frequency? What gain and phase shift result at 10 times the unity-gain frequency? D 2.92 Figure P2.92 shows a circuit that performs the high-pass, single-time-constant function. Such a circuit is known as a first-order high-pass active filter. Derive
stated, please consult Table 3.1. Section 3.1: Intrinsic Semiconductors 3.1 Find values of the intrinsic carrier concentration n i for silicon at – 70°C, 0° C, 20°C, 100°C, and 125°C. At each temperature, what fraction of the atoms is ionized? 22 Recall that a silicon crystal has approximately 5 × 10 3 atoms/cm . 3.2 Calculate the value of n i for gallium arsenide 14 (GaAs) at T = 300 K. The constant B = 3.56 × 10 –3 –3 ⁄ 2 ( cm K ) and the bandgap voltage Eg = 1.42 eV. Section 3.2: Doped